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• George Dimitrakopulos Aristotle University of Thessaloniki, (Greece)
  "Defect and strain engineering in epitaxial semiconductors: Insights from topological analysis and quantitative electron microscopy"


• Thierry Duffar SIMaP, Grenoble, (France)
  "Numerical simulation to help crystal growth research and production"


• Christiane Frank-Rotsch, Leibniz Institute for Crystal Growth, Berlin, (Germany) 
  "Semiconductor bulk crystal growth  by vertical gradient freeze (VGF) method"


• Zbigniew Gałązka, Leibniz Institute for Crystal Growth, Berlin, (Germany)
  "Bulk Crystal Growth and Physical Properties of Transparent Semiconducting Oxides"


• Eleftherios Iliopoulos, University of Crete, Heraklion, (Greece)
  "III-Nitrides Molecular Beam Epitaxy: Fundamentals, Kinetics and Applications"


• Lutz Kirste, Fraunhofer Institute for Applied Solid State Physics IAF, Freiburg, (Germany)
   "X-ray Diffraction Metrology of Semiconductor Substrates and Epitaxial Thin Films for Device Fabrication"


• Nicola Lovergine, University of Salento, Leece, (Italy)
  "Vapor Phase Epitaxy of Semiconductors"


• Grzegorz Muzioł, Institute of High Pressure Physics, Unipress, PAS, Warsaw, (Poland )
  "Novel concepts in optoelectronic devices based on GaN"


• Dorota Pawlak, Ensemble³, (Poland)
  Title of presentation TBA


• Ghazala Sadiq, The Cambridge Crystallographic Data Centre, Cambridge, (United Kingdom)
  "Insights from small molecules - a structural informatics workflow to assess solid form"


• Tomasz Sochacki, Institute of High Pressure Physics, Unipress, PAS, Warsaw, (Poland)
  "The Power of GaN: Crystallization for Tomorrow's Needs"


• Paweł Strak, Institute of High Pressure Physics, Unipress, PAS, Warsaw, (Poland)
  "Abinitio modelling of surfaces, crystal growth and defects"


• Filip Tuomisto, University of Helsinki, (Finland )
  "Positron annihilation spectroscopy: characterizing vacancy defects in crystals"